Tip 122 195w5i

TIP120, TIP121, TIP122 NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK

●

DECEMBER 1971 - REVISED MARCH 1997

Designed for Complementary Use with TIP125, TIP126 and TIP127

TO-220 PACKAGE (TOP VIEW)

●

65 W at 25°C Case Temperature

●

5 A Continuous Collector Current

B

1

●

Minimum hFE of 1000 at 3 V, 3 A

C

2

E

3

Pin 2 is in electrical with the mounting base. MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING

SYMBOL TIP120

Collector-base voltage (IE = 0)

TIP121

Emitter-base voltage Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4.

V

60 VCEO

TIP122 Continuous collector current

80 100

TIP120 TIP121

UNIT

60 VCBO

TIP122 Collector-emitter voltage (IB = 0)

VALUE

80

V

100 V EBO

5

V

IC

5

A

ICM

8

A

IB

0.1

A

Ptot

65

W

Ptot

2

W

½LIC 2

50

mJ °C

Tj

-65 to +150

Tstg

-65 to +150

°C

TL

260

°C

This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.52 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, R BE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.

PRODUCT

INFORMATION

Information is current as of publication date. Products conform to specifications in accordance with the of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

1

TIP120, TIP121, TIP122 NPN SILICON POWER DARLINGTONS DECEMBER 1971 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature PARAMETER V (BR)CEO

ICEO

ICBO

IEBO hFE VCE(sat) VBE VEC

TEST CONDITIONS

Collector-emitter breakdown voltage Collector-emitter cut-off current Collector cut-off current Emitter cut-off current

IC = 30 mA

IB = 0

(see Note 5)

80

TIP122

100

TIP120

0.5

TIP121

0.5

V CE = 50 V

IB = 0

TIP122

0.5

VCB = 60 V

IE = 0

TIP120

0.2

V CB = 80 V

IE = 0

TIP121

0.2

V CB = 100 V

IE = 0

TIP122

0.2

VEB =

IC = 0

5V

2

3V

IC = 0.5 A

3V

IC =

3A

Collector-emitter

IB = 12 mA

IC =

3A

saturation voltage

IB = 20 mA

IC =

5A

VCE =

3V

IC =

3A

IE =

5A

IB = 0

(see Notes 5 and 6)

UNIT V

IB = 0

VCE =

forward voltage

TIP121

IB = 0

V CE =

Parallel diode

MAX

VCE = 30 V

transfer ratio

voltage

TYP

60

V CE = 40 V

Forward current

Base-emitter

MIN TIP120

mA

mA

mA

1000 1000 2

(see Notes 5 and 6)

4

V

(see Notes 5 and 6)

2.5

V

(see Notes 5 and 6)

3.5

V

NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing s, separate from the current carrying s.

thermal characteristics MAX

UNIT

RθJC

Junction to case thermal resistance

PARAMETER

MIN

TYP

1.92

°C/W

RθJA

Junction to free air thermal resistance

62.5

°C/W

MAX

UNIT

resistive-load-switching characteristics at 25°C case temperature PARAMETER

†

†

MIN

TYP

ton

Turn-on time

IC = 3 A

IB(on) = 12 mA

IB(off) = -12 mA

1.5

µs

toff

Turn-off time

V BE(off) = -5 V

RL = 10 Ω

tp = 20 µs, dc ≤ 2%

8.5

µs

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

PRODUCT

2

TEST CONDITIONS

INFORMATION

TIP120, TIP121, TIP122 NPN SILICON POWER DARLINGTONS DECEMBER 1971 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V

TCS120AA

40000

hFE - Typical DC Current Gain

COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT

TC = -40°C TC = 25°C TC = 100°C 10000

1000

VCE = 3 V tp = 300 µs, duty cycle < 2% 100 0·5

1·0

5·0

TCS120AB

2·0 tp = 300 µs, duty cycle < 2% IB = IC / 100 1·5

1·0

0·5 TC = -40°C TC = 25°C TC = 100°C 0 0·5

IC - Collector Current - A

1·0

5·0

IC - Collector Current - A

Figure 1.

Figure 2.

BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT

TCS120AC

VBE(sat) - Base-Emitter Saturation Voltage - V

3·0

2·5

TC = -40°C TC = 25°C TC = 100°C

2·0

1·5

1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% 0·5 0·5

1·0

5·0

IC - Collector Current - A

Figure 3.

PRODUCT

INFORMATION

3

TIP120, TIP121, TIP122 NPN SILICON POWER DARLINGTONS DECEMBER 1971 - REVISED MARCH 1997

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 100

SAS120AA

IC - Collector Current - A

DC Operation tp = 300 µs, d = 0.1 = 10%

10

1·0

TIP120 TIP121 TIP122 0·1 1·0

10

100

1000

VCE - Collector-Emitter Voltage - V

Figure 4.

THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE

TIS120AA

Ptot - Maximum Power Dissipation - W

80 70 60 50 40 30 20 10 0 0

25

50

75

100

TC - Case Temperature - °C

Figure 5.

PRODUCT

4

INFORMATION

125

150

TIP120, TIP121, TIP122 NPN SILICON POWER DARLINGTONS DECEMBER 1971 - REVISED MARCH 1997

MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220

4,70 4,20

ø

10,4 10,0

3,96 3,71

1,32 1,23

2,95 2,54

see Note B 6,6 6,0 15,90 14,55 see Note C

6,1 3,5

1,70 1,07

0,97 0,61 1

2

14,1 12,7

3 2,74 2,34 5,28 4,88

VERSION 1

0,64 0,41 2,90 2,40

VERSION 2

ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm.

PRODUCT

5

INFORMATION

MDXXBE

TIP120, TIP121, TIP122 NPN SILICON POWER DARLINGTONS DECEMBER 1971 - REVISED MARCH 1997

IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to , before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE- APPLICATIONS, DEVICES OR SYSTEMS.

Copyright © 1997, Power Innovations Limited

PRODUCT

6

INFORMATION

This datasheet has been from: www.datasheetcatalog.com Datasheets for electronics components.