D2011k u42s

TetraFET

D2011UK METAL GATE RF SILICON FET MECHANICAL DATA

E

C D

B

8 1 2 7

R F

A 3

6 5

4

Q O

N M J K L

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED

I P H G

FEATURES

DBC3 Package PIN 1 Source

PIN 5 Source

• SIMPLIFIED AMPLIFIER DESIGN

PIN 2 Drain

PIN 6 Gate

• SUITABLE FOR BROAD BAND APPLICATIONS

PIN 3 Drain

PIN 7 Gate

PIN 4 Source

PIN 8 Source

DIM A B C D E F G H I J K L M N O P Q R

mm 6.47 0.76 45° 0.76 1.14 2.67 11.73 8.43 7.92 0.20 0.64 0.30 3.25 2.11 6.35SQ 1.65 0.13 0.25

Tol. 0.08 0.08 5° 0.08 0.08 0.08 0.13 0.08 0.08 0.02 0.02 0.02 0.08 0.08 0.08 0.51 max 0.07

Inches .255 .030 45° .030 .045 .105 .462 .332 .312 .008 .025 .012 .128 .083 .250SQ .065 .005 0.010

• LOW Crss Tol. .003 .003 5° .003 .003 .003 .005 .003 .003 .001 .001 .001 .003 .003 .003 .020 max .003

• LOW NOISE • HIGH GAIN

APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 2 GHz

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc.

Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk

70W 65V ±20V 8A –65 to 150°C 200°C Prelim. 9/00

D2011UK

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS

Drain–Source

Typ.

Max. Unit V

VGS = 0

ID = 10mA

VDS = 28V

VGS = 0

8

mA

VGS = 20V

VDS = 0

8

mA

VGS(th) Gate Threshold Voltage*

ID = 10mA

VDS = VGS

7

V

gfs

Forward Transconductance*

VDS = 10V

ID = 1.6A

GPS

Common Source Power Gain

PO = 10W

Drain Efficiency

VDS = 28V

IDSS IGSS

h

Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current

VSWR Load Mismatch Tolerance

IDQ = 0.8A

f = 1GHz

65

1 1.44

S

10

dB

40

%

20:1

—

Ciss

Input Capacitance

VDS = 0

VGS = –5V f = 1MHz

96

pF

Coss

Output Capacitance

VDS = 28V

VGS = 0

f = 1MHz

48

pF

Crss

Reverse Transfer Capacitance

VDS = 28V

VGS = 0

f = 1MHz

4

pF

* Pulse Test:

Pulse Duration = 300 ms , Duty Cycle £ 2%

THERMAL DATA RTHj–case

Semelab plc.

Thermal Resistance Junction – Case

Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk

Max. 2.5°C / W

Prelim. 9/00