Ds_am4835ep_c1 (2) 1c256h
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AM4835EP
Analog Power P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • •
PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 19 @ VGS = -10V -30 30 @ VGS = -4.5V
ID (A) -9.5 -7.5
SOIC-8 Top View
Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology
S
S S
1 2
8 7
D D
S G
3 4
6 5
D D
G
D P-Channel MOSFET
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Symbol Maximum Units Parameter -30 Drain-Source Voltage VDS V VGS ±25 Gate-Source Voltage o
TA=25 C
a
Continuous Drain Current
o
TA=70 C
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
-9.5
ID IDM
±50
IS
-2.1
o
TA=25 C
a
Power Dissipation
o
TA=70 C
THERMAL RESISTANCE RATINGS Parameter a
Maximum Junction-to-Case a Maximum Junction-to-Ambient
t <= 5 sec t <= 10 sec
RθJC RθJA
W
2.6
TJ, Tstg
Symbol
A
3.1
PD
Operating Junction and Storage Temperature Range
A
-8.3
o
C
-55 to 150
Maximum 25 50
Units o o
C/W C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
1 PRELIMINARY
Publication Order Number: DS-AM4835E_C
AM4835EP
Analog Power o
SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter
Symbol
Test Conditions
V(BR)DSS VGS(th) IGSS
VGS = 0 V, ID = -250 uA VDS = VGS, ID = -250 uA
Limits Unit Min Typ Max
Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current
A
IDSS ID(on)
Drain-Source On-Resistance
A
rDS(on)
-30 -1
Diode Forward Voltage
Dynamic
A
g fs VSD
V
-3
VDS = 0 V, VGS = ±4.5 V
±200
nA
VDS = -24 V, VGS = 0 V
-1 -5
uA
VDS = -24 V, VGS = 0 V, T J = 55oC
VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -9.5 A VGS = -4.5 V, ID = -7.5 A
-50
A 16 26
19 30
VGS = -10 V, ID = -9.5 A, TJ = 55 C
20
29
VDS = -15 V, ID = -9.5 A IS = -2.1 A, VGS = 0 V
31 -0.7
-1.2
12.8
20
o
Forward Tranconductance
-1.6
mΩ S V
b
Total Gate Charge
Qg
Gate-Source Charge Gate-Drain Charge
Qgs Qgd
VDS = -15 V, VGS = -4.5 V, ID = -9.5 A
nC
4.5 5
Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time
td(on) tr td(off) tf
VDD = -15 V, RL = 15 Ω , ID = -1 A, VGEN = -10 V, RG = 6Ω
15 12 62 46
26 21 108 71
nS
Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2 PRELIMINARY
Publication Order Number: DS-AM4835E_C
AM4835EP
Analog Power
Typical Electrical Characteristics (P-Channel) 50
0 .0 4
RDS(ON) Resistance (Ω)
4 .5 V
IDS Drain Current (A)
40 5 Vthr ough 10 V 4V 30
20
3 .5
10
3
0 .0 3 2
VGS=4.5V 0 .0 2 4
VGS=10V 0 .0 16
0 .0 0 8
0
0 0
0 .5
1
1.5
2
2 .5
3
3 .5
0
4
20
30
40
50
I D Drain Current (A)
VDS (V) Figure 1. On-Region Characteristics
Figure 2. On-Resistance with Drain Current
0 .0 6
1.6
VGS = 10V ID = 9.5A
1.4
Resistance (Ω )
Normalized RDS(on)
10
1.2 1.0
0 .0 5 0 .0 4 0 .0 3 0 .0 2
0.8
R
0 .0 1 0.6 - 50
- 25
0
25
50
75
100
125
0
150
0
2
4
6
8
10
VGS Gate to Source Voltage (V)
T J Juncation T emperature (ºC) Figure 3. On-Resistance Variation with Temperature
Figure 4. On-Resistance Variation with Gate to Source Voltage
60 VD=VG
100
-55C 25C
40
I Source Current (A)
ID Drain Current (A)
50
30 125C 20 10
10
T J = 150 C T J = 25C
1
0 0
1
2
3
4
5
6 0 .1
VGS Ga te to S o urc e Vo lta ge (V)
0
0 .2
0 .4
0 .6
0 .8
1
1 .2
VS D Source to Drain Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature
3 PRELIMINARY
Publication Order Number: DS-AM4835E_C
AM4835EP
Analog Power
Typical Electrical Characteristics (P-Channel) 2000
10
Vgs Gate to Source ( V
VD= 10V ID= -9.5A
Ciss
8
Capacitance (pF)
1500 6
4
2
0 0
5
10
15
20
25
1000
Coss
500
Crss
0
30
0
Qg, Total Gate Charge (nC)
5
Figure 7. Gate Charge Characteristics
limited RDS(ON)
100
ID
15
20
Figure 8. Capacitance Characteristics 50
10 us 100 us
45 40
10
1ms 10ms 1
POWER (W
ID Curren
10
VDS (V)
100 1s
1
0.1
35 30 25 20
10s
15
100s DC
10 5
0.01 0.1
1
10
0
100
0.001
VDS Drain to Source Voltage (V) Figure 9. Maximum Safe Operating Area
0.1
TIME(S) 10
1000
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient 1
0.1
.5 .2 P DM
.1 .05 .02
t1 t2
1. Duty C yc a l D = t1/t2 2. P e r Unit B a s e R θJ A =70C /W 3. T J M - T A = P DM Z θjc 4. S ure fa c e M o unte d
0.01
Single Pulse 0.001 0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (S)
Figure 11. Transient Thermal Response Curve
4 PRELIMINARY
Publication Order Number: DS-AM4835E_C
AM4835EP
Analog Power
Package Information SO-8: 8LEAD
H x 45°
5 PRELIMINARY
Publication Order Number: DS-AM4835E_C
AM4835EP
Analog Power
Ordering information • AM4835EP-T1-XX – – – – – – –
A: M: 4835: E: P: T1: XX:
Analog Power MOSFET Part number ESD Protected P-Channel Tape & reel Blank: Standard PF: Leadfree
6 PRELIMINARY
Publication Order Number: DS-AM4835E_C
Analog Power P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • •
PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 19 @ VGS = -10V -30 30 @ VGS = -4.5V
ID (A) -9.5 -7.5
SOIC-8 Top View
Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology
S
S S
1 2
8 7
D D
S G
3 4
6 5
D D
G
D P-Channel MOSFET
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Symbol Maximum Units Parameter -30 Drain-Source Voltage VDS V VGS ±25 Gate-Source Voltage o
TA=25 C
a
Continuous Drain Current
o
TA=70 C
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
-9.5
ID IDM
±50
IS
-2.1
o
TA=25 C
a
Power Dissipation
o
TA=70 C
THERMAL RESISTANCE RATINGS Parameter a
Maximum Junction-to-Case a Maximum Junction-to-Ambient
t <= 5 sec t <= 10 sec
RθJC RθJA
W
2.6
TJ, Tstg
Symbol
A
3.1
PD
Operating Junction and Storage Temperature Range
A
-8.3
o
C
-55 to 150
Maximum 25 50
Units o o
C/W C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
1 PRELIMINARY
Publication Order Number: DS-AM4835E_C
AM4835EP
Analog Power o
SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter
Symbol
Test Conditions
V(BR)DSS VGS(th) IGSS
VGS = 0 V, ID = -250 uA VDS = VGS, ID = -250 uA
Limits Unit Min Typ Max
Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current
A
IDSS ID(on)
Drain-Source On-Resistance
A
rDS(on)
-30 -1
Diode Forward Voltage
Dynamic
A
g fs VSD
V
-3
VDS = 0 V, VGS = ±4.5 V
±200
nA
VDS = -24 V, VGS = 0 V
-1 -5
uA
VDS = -24 V, VGS = 0 V, T J = 55oC
VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -9.5 A VGS = -4.5 V, ID = -7.5 A
-50
A 16 26
19 30
VGS = -10 V, ID = -9.5 A, TJ = 55 C
20
29
VDS = -15 V, ID = -9.5 A IS = -2.1 A, VGS = 0 V
31 -0.7
-1.2
12.8
20
o
Forward Tranconductance
-1.6
mΩ S V
b
Total Gate Charge
Qg
Gate-Source Charge Gate-Drain Charge
Qgs Qgd
VDS = -15 V, VGS = -4.5 V, ID = -9.5 A
nC
4.5 5
Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time
td(on) tr td(off) tf
VDD = -15 V, RL = 15 Ω , ID = -1 A, VGEN = -10 V, RG = 6Ω
15 12 62 46
26 21 108 71
nS
Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2 PRELIMINARY
Publication Order Number: DS-AM4835E_C
AM4835EP
Analog Power
Typical Electrical Characteristics (P-Channel) 50
0 .0 4
RDS(ON) Resistance (Ω)
4 .5 V
IDS Drain Current (A)
40 5 Vthr ough 10 V 4V 30
20
3 .5
10
3
0 .0 3 2
VGS=4.5V 0 .0 2 4
VGS=10V 0 .0 16
0 .0 0 8
0
0 0
0 .5
1
1.5
2
2 .5
3
3 .5
0
4
20
30
40
50
I D Drain Current (A)
VDS (V) Figure 1. On-Region Characteristics
Figure 2. On-Resistance with Drain Current
0 .0 6
1.6
VGS = 10V ID = 9.5A
1.4
Resistance (Ω )
Normalized RDS(on)
10
1.2 1.0
0 .0 5 0 .0 4 0 .0 3 0 .0 2
0.8
R
0 .0 1 0.6 - 50
- 25
0
25
50
75
100
125
0
150
0
2
4
6
8
10
VGS Gate to Source Voltage (V)
T J Juncation T emperature (ºC) Figure 3. On-Resistance Variation with Temperature
Figure 4. On-Resistance Variation with Gate to Source Voltage
60 VD=VG
100
-55C 25C
40
I Source Current (A)
ID Drain Current (A)
50
30 125C 20 10
10
T J = 150 C T J = 25C
1
0 0
1
2
3
4
5
6 0 .1
VGS Ga te to S o urc e Vo lta ge (V)
0
0 .2
0 .4
0 .6
0 .8
1
1 .2
VS D Source to Drain Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature
3 PRELIMINARY
Publication Order Number: DS-AM4835E_C
AM4835EP
Analog Power
Typical Electrical Characteristics (P-Channel) 2000
10
Vgs Gate to Source ( V
VD= 10V ID= -9.5A
Ciss
8
Capacitance (pF)
1500 6
4
2
0 0
5
10
15
20
25
1000
Coss
500
Crss
0
30
0
Qg, Total Gate Charge (nC)
5
Figure 7. Gate Charge Characteristics
limited RDS(ON)
100
ID
15
20
Figure 8. Capacitance Characteristics 50
10 us 100 us
45 40
10
1ms 10ms 1
POWER (W
ID Curren
10
VDS (V)
100 1s
1
0.1
35 30 25 20
10s
15
100s DC
10 5
0.01 0.1
1
10
0
100
0.001
VDS Drain to Source Voltage (V) Figure 9. Maximum Safe Operating Area
0.1
TIME(S) 10
1000
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient 1
0.1
.5 .2 P DM
.1 .05 .02
t1 t2
1. Duty C yc a l D = t1/t2 2. P e r Unit B a s e R θJ A =70C /W 3. T J M - T A = P DM Z θjc 4. S ure fa c e M o unte d
0.01
Single Pulse 0.001 0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (S)
Figure 11. Transient Thermal Response Curve
4 PRELIMINARY
Publication Order Number: DS-AM4835E_C
AM4835EP
Analog Power
Package Information SO-8: 8LEAD
H x 45°
5 PRELIMINARY
Publication Order Number: DS-AM4835E_C
AM4835EP
Analog Power
Ordering information • AM4835EP-T1-XX – – – – – – –
A: M: 4835: E: P: T1: XX:
Analog Power MOSFET Part number ESD Protected P-Channel Tape & reel Blank: Standard PF: Leadfree
6 PRELIMINARY
Publication Order Number: DS-AM4835E_C
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